Angular Distributions of Fast Electrons at Planar Channeling in Silicon Crystals
V. V. KaplinInstitute of Nuclear Physics, Tomsk Polytechnical InstituteS. B. NurmagambetovInstitute of Nuclear Physics, Tomsk Polytechnical InstituteVladimir I. GridnevInstitute of Nuclear Physics, Tomsk Polytechnical InstituteE. I. RozumInstitute of Nuclear Physics, Tomsk Polytechnical InstituteSungmin PakInstitute of Nuclear Physics, Tomsk Polytechnical InstituteS. R. UglovInstitute of Nuclear Physics, Tomsk Polytechnical InstituteS.A. VorobievInstitute of Nuclear Physics, Tomsk Polytechnical Institute
ABI
Аннотация
Abstract Detailed experimental and theoretical investigations for the orientation dependence of the angular distribution of 5.6 MeV electrons transmitted through a silicon crystal in (110) and (111) planar directions are performed. The realization of atomic‐type and molecular‐type quantum states of channeled electrons as well as the effect of preferential population of the definite states are observed.
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