Статья

Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

Zhaohui ZhongDepartment of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138Fang QianDepartment of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138Deli WangDepartment of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138Charles M. LieberDepartment of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

2003en

ABI

Аннотация

Magnesium-doped gallium nitride nanowires have been synthesized via metal-catalyzed chemical vapor deposition. Nanowires prepared on c-plane sapphire substrates were found to grow normal to the substrate, and transmission electron microscopy studies demonstrated that the nanowires had single-crystal structures with a 〈0001〉 growth axis that is consistent with substrate epitaxy. Individual magnesium-doped gallium nitride nanowires configured as field-effect transistors exhibited systematic variations in two-terminal resistance as a function of magnesium dopant incorporation, and gate-dependent conductance measurements demonstrated that optimally doped nanowires were p-type with hole mobilities of ca. 12 cm2/V·s. In addition, transport studies of crossed gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p−n diodes. In forward bias, the p−n crossed nanowire junctions also function as nanoscale UV-blue light emitting diodes. The new synthesis of p-type gallium nitride nanowire building blocks opens up significant potential for the assembly of nanoscale electronics and photonics.

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Идентификаторы

DOI: 10.1021/nl034003w

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