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Direct growth of single-crystalline III–V semiconductors on amorphous substrates

Kevin ChenDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USARehan KapadiaDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAAudrey HarkerDepartment of Chemical Engineering, University of California, Berkeley, California 94720, USASujay B. DesaiDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAJeong Seuk KangDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USASteven ChuangDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAMahmut TosunDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USACarolin M. Sutter‐FellaDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAMichael TsangDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAYuping ZengDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USADaisuke KiriyaDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAJubin HazraDepartment of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USASurabhi R. MadhvapathyMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAMark HettickDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAYuze ChenDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, TaiwanJames P. MastandreaDepartment of Materials Science and Engineering, University of California, Berkeley, California 94720, USAMatin AmaniDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAStefano CabriniMolecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, 94720 California, USAYu‐Lun ChuehDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, TaiwanJoel W. AgerMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAD. C. ChrzanDepartment of Materials Science and Engineering, University of California, Berkeley, California 94720, USAAli JaveyDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
2016en
ABI

Аннотация

The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V's on application-specific substrates by direct growth.

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