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Dislocation Mobility in the {1122} 〈1123〉 Slip System of Zinc Single Crystals

F. F. LavrentevPhysico-Technical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovO. P. SalitaPhysico-Technical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovV. L. VladimirovaPhysico-Technical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
1968en
ABI

Аннотация

Abstract Results are presented of measurements of the stress dependence of screw dislocation velocities in the {11 2 2} 〈11 2 3〉 slip system (pyramidal slip) of zinc single crystals. The investigations have been carried out on zinc single crystals of 99.999% purity at room temperature. The dislocation mobility has been studied within a wide range of velocities and shear stresses below and above the critical resolved shear stress. When the shear stress τ changed from 20 to 4000 p/mm 2 the dislocation velocity v varied from 10 −3 to 10 4 cm/s. A strong dependence of v on τ is observed in the stress range 20 to 100 p/mm 2 , which can be described by an exponential and the dislocation mobility is determined by a thermally activated mechanism. A weak linear dependence of v on τ is observed at shear stresses greatly exceeding the critical shear stress (300 to 4000 p/mm 2 ). These results are explained in terms of a phonon viscosity mechanism. The measured drag constant is of the same order of magnitude as that calculated for the mechanism of phonon viscosity.

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