A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure
М. А. PutyatoRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaN. A. ValishevaRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaМ. О. ПетрушковRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaВ. В. ПреображенскийRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaИ. Б. ЧистохинRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaB. R. SemyaginRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaE. A. EmelyanovRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaA. V. VasevRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaA. F. SkachkovG. I. YurkoИ Ю Нестеренко
2019en
ABI
Аннотация
Problems arising in fabrication of lightweight flexible solar cells based on heteroepitaxial AIIIBV structures with substrate etching are discussed. Possible solutions are proposed. A tandem lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure was fabricated. Its mass and dimensional characteristics were determined, and bending tests were performed. The specific mass of this solar cell was 0.51 kg/m2, and the allowable bend radius was 36 mm. Its current–voltage curves were measured for the AM0 and AM1.5D spectra at 28.6°C and 25°C, respectively. The cell efficiency was found to be 23.1% and 28.3%.
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