Chemical vapor deposition and electrical characterization of sub-10nm diameter InSb nanowires and field-effect transistors
Rajat Kanti PaulDepartment of Mechanical Engineering, University of California, Riverside, 900 University Ave., Riverside, CA 92521, USAMiroslav PenchevDepartment of Electrical Engineering, University of California, Riverside, Riverside, CA 92521, USAJiebin ZhongDepartment of Mechanical Engineering, University of California, Riverside, 900 University Ave., Riverside, CA 92521, USAMihrimah OzkanDepartment of Electrical Engineering, University of California, Riverside, Riverside, CA 92521, USAMaziar GhazinejadDepartment of Mechanical Engineering, University of California, Riverside, 900 University Ave., Riverside, CA 92521, USAXiaoye JingDepartment of Electrical Engineering, University of California, Riverside, Riverside, CA 92521, USAEmre YengelDepartment of Electrical Engineering, University of California, Riverside, Riverside, CA 92521, USACengiz S. OzkanDepartment of Mechanical Engineering, University of California, Riverside, 900 University Ave., Riverside, CA 92521, USA
2010en
ABI
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