Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures
G. D. ScottUCLA Department of Physics and Astronomy, , Los Angeles, California 90095M. XiaoUCLA Department of Physics and Astronomy, , Los Angeles, California 90095H. W. JiangUCLA Department of Physics and Astronomy, , Los Angeles, California 90095E. T. CrokeHRL Laboratories , LLC, Malibu, California 90265E. YablonovitchUCLA Department of Electrical Engineering, , Los Angeles, California 90095
2007en
ABI
Аннотация
Metallization of Schottky surface gates by sputtering Au on strained Si∕SiGe heterojunctions enables the depletion of the two dimensional electron gas at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of submicron Au electrodes sputtered onto Si∕SiGe without the need of a wetting layer.
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