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Saturation of intersubband transitions in<i>p</i>-type semiconductor quantum wells

Yia‐Chung ChangDepartment of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801R. B. JamesDepartment of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
1989en
ABI

Аннотация

Saturation behavior of intersubband optical transitions in p-type semiconductor quantum wells is examined theoretically with the multiband effective-mass model. Carrier-phonon scatterings are taken into account within the deformation-potential approximation. Deviation of the hole distribution from thermal equilibrium due to optical pumping is calculated by solving coupled rate equations. Pump-and-probe absorption spectra are also studied, and possible applications for light-by-light modulation are discussed.

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