Investigation of the transient characteristics of S-diodes based on silicon compensated by vanadium

Abstract To obtain more photosensitive S-diodes, silicon should be compensated for by impurities, which increase the photosensitivity of the original crystals. Diffusion of vanadium in silicon was carried out in evacuated or open quartz ampoules at a temperature of 900-1250 °C for 2-20 hours. Silicon wafers 0.5-1.0 mm thick and an alloying element of vanadium were placed in the ampoule. Usually used n-Si with ρ ~ 5 ÷ 200 Ω·sm and with a thickness of 0.2-0.5 mm. The concentration of deep levels introduced during diffusion was 1014 cm -3 . The resistivity of silicon after diffusion increased to 10 3 -10 4 Ω·sm at 300 K, and the diffusion length Ld decreased to 10-30 μm. S-diodes were made in a vacuum by melting aluminum and Au + 0.1% Sb alloy at 700 °C for 1 min. The contact area (S) is approximately 0.2 mm2, the base thickness d = 0.2-1.0 mm. Attitude d/L d ≈10 ÷ 100. I incline ~ 1/t inclusion in a wide range of currents is linear, where I incline &gt; I bre . Determined by the slope I incline ~ 1/t inclusion the charge is Q cr = 3.52·10 -9 C. In this case, the average concentration of injected current carriers in the base is n = 5.44·10 13 cm -3 , which is in good agreement with the concentration of electroactive atoms V in Si, determined by capacitive methods. The dependence <?CDATA $\frac{1}{V_{t}}-\frac{1}{V_{\infty}}$?> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:mfrac> <mml:mrow> <mml:mn>1</mml:mn> </mml:mrow> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>V</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>t</mml:mi> </mml:mrow> </mml:msub> </mml:mrow> </mml:mfrac> <mml:mo>−</mml:mo> <mml:mfrac> <mml:mrow> <mml:mn>1</mml:mn> </mml:mrow> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>V</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">∞</mml:mi> </mml:mrow> </mml:msub> </mml:mrow> </mml:mfrac> </mml:mrow> </mml:math> for S-diodes from n-Si &lt;V&gt; has a complex form at each temperature and is approximated by two exponents. The obtained experimental results, their analysis and conclusions on S-diodes from Si &lt;V&gt; can be used as a temperature relay, photo relay, switches and photodetectors controlled by the sensitivity current.

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