Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells
M. Yu. ChernovIoffe Institute, St. Petersburg 194021, RussiaVictor A. Solov’evIoffe Institute, St. Petersburg 194021, RussiaO. S. KomkovIoffe Institute, St. Petersburg 194021, RussiaDmitriy D. FirsovSt. Petersburg Electrotechnical University “LETI”, St. Petersburg 197376, RussiaB. Ya. MeltserIoffe Institute, St. Petersburg 194021, RussiaM. A. YagovkinaIoffe Institute, St. Petersburg 194021, RussiaМ. В. БайдаковаIoffe Institute, St. Petersburg 194021, RussiaP. S. Kop’evIoffe Institute, St. Petersburg 194021, RussiaS. V. IvanovIoffe Institute, St. Petersburg 194021, Russia
2017en
ABI
Аннотация
In this Letter, we report on the design optimization of metamorphic InSb/InAs/In(Ga,Al)As/GaAs heterostructures with type-II-in-type-I quantum well (QW) active regions, aimed at the enhancement of their room-temperature photoluminescence (PL). The strong influence of the design of the convex-graded metamorphic buffer layer (MBL) and the value of the MBL inverse step in the range from 2 to 14 mol % In on stresses in such heterostructures, as well as their PL intensity, are discussed. The optimized metamorphic In(Sb,As)/In0.63Ga0.37As/In0.75Al0.25As/MBL/GaAs structure with the inverse step of 10 mol % demonstrates 3.2–3.5 µm mid-IR PL intensity quenching from liquid-nitrogen to room temperature by a factor of 12.
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