Dynamically controllable polarity modulation of MoTe <sub>2</sub> field-effect transistors through ultraviolet light and electrostatic activation
Enxiu WuState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, ChinaYuan XieState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, ChinaJing ZhangState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, ChinaHao ZhangState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, ChinaXiaodong HuState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, ChinaJing LiuState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, ChinaChongwu ZhouDepartment of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USADaihua ZhangState Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, China
2019en
ABI
Аннотация
flake with excellent photo detection and photovoltaic performances. The findings provide an effective and generic doping approach for a wide variety of 2D materials.
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