<i>Colloquium</i>: Excitons in atomically thin transition metal dichalcogenides
Gang WangUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceAlexey ChernikovUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceM. M. GlazovUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceTony F. HeinzUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceX. MarieUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceT. AmandUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, FranceBernhard UrbaszekUniversité de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, France
2018en
ABI
Аннотация
Most two-dimensional (2D) semiconductors are interesting materials as quantum confinement enhances the Coulomb interaction between carriers, leading to a strong attraction between conduction electrons and valence holes, forming stable excitons and the optical response of 2D semiconductors can be extraordinary. In this Colloquium the progress and open questions in the study of excitons in 2D semiconductors from both the experimental and theoretical perspectives are reviewed.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 2Использованных источников: 0