Stable Fourfold Configurations for Small Vacancy Clusters in Silicon from<i>ab initio</i>Calculations
Dmitry V. MakhovDépartement de Physique et Regroupement Québécois sur les Matériaux de Pointe, Université de Montréal, Case Postale 6128, Succursale Centre-Ville, Montréal, Québec H3C 3J7, CanadaLaurent J. LewisDépartement de Physique et Regroupement Québécois sur les Matériaux de Pointe (RQMP), Université de Montréal, Case Postale 6128, Succursale Centre-Ville, Montréal, Québec H3C 3J7, Canada
2004en
ABI
Аннотация
Using density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and pentavacancies in silicon. These new configurations consist of combinations of a ring hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain fourfold. As a result, their formation energies are lower by 0.6, 1.0, and 0.6 eV, respectively, than the "part of a hexagonal ring" configurations, believed until now to be the lowest-energy states.
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