Raman scattering in mosaic silicon carbide films
I. G. AksyanovIoffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaM. E. KompanIoffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaI. KulkovaIoffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
2010en
ABI
Аннотация
The Raman spectra of mosaic silicon carbide films grown on silicon substrates by solid-state epitaxy have been studied. The main polytypes forming the film material have been determined. It has been experimentally revealed that the properties of the silicon carbide film are changed after an aluminum nitride film is deposited on the former film. This has been interpreted as a manifestation of good damping properties of the SiC film when layers of other semiconductors are grown on it.
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