Статья

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

Runchen FangState Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 200433, Shanghai, China. [email protected]Qingqing SunState Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 200433, Shanghai, ChinaPeng ZhouState Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 200433, Shanghai, ChinaWen YangState Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 200433, Shanghai, ChinaPengfei WangState Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 200433, Shanghai, ChinaDavid Wei ZhangState Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 200433, Shanghai, China

2013en

ABI

Аннотация

We demonstrated a flexible resistive random access memory device through a low-temperature atomic layer deposition process. The device is composed of an HfO2/Al2O3-based functional stack on an indium tin oxide-coated polyethylene terephthalate substrate. After the initial reset operation, the device exhibits a typical bipolar, reliable, and reproducible resistive switching behavior. After a 104-s retention time, the memory window of the device is still in accordance with excellent thermal stability, and a 10-year usage is still possible with the resistance ratio larger than 10 at room temperature and at 85°C. In addition, the operation speed of the device was estimated to be 500 ns for the reset operation and 800 ns for the set operation, which is fast enough for the usage of the memories in flexible circuits. Considering the excellent performance of the device fabricated by low-temperature atomic layer deposition, the process may promote the potential applications of oxide-based resistive random access memory in flexible integrated circuits.

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Идентификаторы

DOI: 10.1186/1556-276x-8-92

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar