Electromodulated Photoluminescence Study of CdS/CdTe Thin-Film Solar Cell

The n + -CdTe 1- x S x layer, in which the most of the photocarriers are generated in the CdS/CdTe thin-film solar cell, has been characterized using a novel spectroscopic technique called electromodulated photoluminescence (EMPL), which is the first derivative spectroscopy monitoring electric-field-induced changes in the PL signal. In conjunction with the results of PL measurements, the ultraviolet-light-excited (UVE-) EMPL measurements reveal that the depletion layer is extended to a quite shallow region in the n + -CdTe 1- x S x layer from the CdS/CdTe(S) metallurgical interface by <15 nm and not extended into the n -CdS layer. Also demonstrated here is that the strong UVE-EMPL signal is closely connected with the high photovoltaic (PV) performances because it is obtained from the shallow depleted n + -CdTe 1- x S x region with low density of nonradiative recombination centers.

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