Статья

Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence

Tamotsu OkamotoResearch Center for Quantum Effect Electronics, Tokyo Institute of Technology,Yuichi MatsuzakiDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology,Nowshad AminDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology,Akira YamadaDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology,Makoto KonagaiDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology,

1998en

ABI

Аннотация

Highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) method with a glass/ITO/CdS/CdTe/Cu-doped carbon/Ag structure were characterized by low-temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to V Cd –Cl defect complexes appeared as a result of CdCl 2 treatment. CdS/CdTe junction PL revealed that a CdS x Te 1- x mixed crystal layer was formed at the CdS/CdTe interface region during the deposition of CdTe by CSS and that CdCl 2 treatment promoted the formation of the mixed crystal layer. Furthermore, in the PL spectra of the heat-treated CdTe after screen printing of the Cu-doped carbon electrode, a neutral-acceptor bound exciton (A Cu 0 , X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment.

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Идентификаторы

DOI: 10.1143/jjap.37.3894

Цитирования и источники

Цитирований: 4Использованных источников: 0

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