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Magnetoelectric effect in amorphous FeNiSiC ferromagnet-piezoelectric planar structures

L. Y. FetisovMoscow State University, Moscow, 119991, RussiaY. K. FetisovMoscow Institute of Radio Engineering Electronics, and Automation (Technical University), pr. Vernadskogo 88, Moscow, 119454, RussiaN. S. PerovMoscow State University, Moscow, 119991, RussiaD. V. ChashinMoscow Institute of Radio Engineering Electronics, and Automation (Technical University), pr. Vernadskogo 88, Moscow, 119454, Russia
2011en
ABI

Аннотация

The magnetoelectric (ME) effect is studied in composite two- and three-layer disk structures containing magnetostriction layers of an amorphous FeNiSiC ferromagnet and a lead zirconate titanate piezoelectric layer. Due to a high magnetostriction (∼33 × 10−6) and a low saturation field (∼200 Oe), an FeNiSiC layer has a high piezomagentic coefficient, which results in an effective ME coupling in low fields (∼25 Oe). The ME effect is ∼0.2 V cm−1 Oe−1 at a low frequency and increases to 11.9 and 13.2 V cm−1 Oe−1 when bending and in-plane mechanical vibrations are excited in a resonance manner in the structures at frequencies of ∼8.2 and ∼170.0 kHz, respectively. Structures containing amorphous FeNiSiC layers are promising for magnetic field transducers and electric energy generators and converters.

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