Simulation of solar cells with quantum wells and comparison with conventional solar cells

The efficiency of photoconversion in solar cells based on GaAs with InGaAs quantum wells under the AM 1.5 conditions for various levels of base doping has been simulated using the software package Sim-Windows. The results obtained are compared with the efficiency of photoconversion in conventional solar cells. It is shown that solar cells with quantum wells can exhibit a fairly high efficiency of photoconversion in comparison with the photoconversion efficiency of conventional solar cells under the following conditions: (i) the lifetimes of for charge carriers in the quantum wells are longer than those in the barrier material and (ii) the level of doping of the base is not very high. It is established that the maximum efficiency of photoconversion in conventional solar cells is higher than the photoconversion efficiency in solar cells with quantum wells. This efficiency is attained at high doping levels in the base (∼3 × 1018 cm−3 at the parameters used in calculations). This is related to a more intense radiative recombination and also to specific features of screening and charge transport in solar cells with quantum wells at high doping levels. It is shown that, at fairly large values for the degree of concentration of incident radiation, the values for the photoconversion efficiency in solar cells with quantum wells for the low and high levels of doping of the base come closer to each other.

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