On the Static Characteristics of High-Low Junction Devices†

This paper presents the static analysis of the RvNR structure and shows that gross deviations from the expected ‘ ohmie ’ behaviour are present. The analysis proceeds by assuming the total current density is a known, solenoidal vector. From this and the necessary boundary conditions, the excess carrier concentrations and the terminal voltage are calculated. Experimental results are given, and are found to be in excellent agreement with the theory.

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