A new approach towards the current–voltage characteristics of the l–h junction

A mathematical approach is given for the current–voltage characteristics of l–h junctions in the direction of accumulation and exclusion of charge carriers. The calculations of these characteristics are based on the formalism of the potential Ψ. The recombination of carriers within the l–h junction depletion layer and on the interface of the junction is neglected. The results obtained are compared with theoretical and experimental results given by Prokhorov et al. [7]. [Russian Text Ignored]

Перевод пока недоступен