Theory of implantation recoil atoms

An implantation theory of recoil atoms is considered. As is known, the recoil implantation consits in the introduction of atoms of an evaporated film into a substrate by bombardment of the film by accelerated ions. A number of parameters of this process is calculated in terms of a theory of radiation cascade. At first there is presented a calculation of the cascade function with account of nonelastic losses of ion energy and the scattering anisotropy. Then there are calculated a total number of the recoil atoms reaching the substrate, the film thickness dependence of the number of the recoil atoms, and the profile of the recoil atoms in the substrate on the basis of calculated energy spectrum of the cascade atoms. The results are compared with experimental data. [Russian Text Ignored].

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