Development of a silicon carbide radiation detector
F.H. RuddyWestinghouse Science and Technology Center, Pittsburgh, PA, USAA.R. DullooWestinghouse Science and Technology Center, Pittsburgh, PA, USAJ.G. SeidelWestinghouse Science and Technology Center, Pittsburgh, PA, USAS. R. SeshadriNorthrop Grumman Science and Technology Center, Pittsburgh, PA, USAL.B. RowlandNorthrop Grumman Science and Technology Center, Pittsburgh, PA, USA
1998en
ABI
Аннотация
The radiation detection properties of semiconductor detectors made of 4H silicon carbide were evaluated. Both Schottky and p-n junction devices were tested. Exposure to alpha particles from a /sup 238/Pu source led to robust signals from the detectors. The resolution of the Schottky SiC detector was 5.8% (FWHM) at an energy of 294 keV, while that of the p-n junction was 6.6% (FWHM) at 260 keV. No effect of temperature in the range of 22 to 89/spl deg/C was observed on the characteristics of the /sup 238/Pu alpha-induced signal from the SiC detector. In addition, testing in a gamma field of 10,000 rad-Si h/sup -1/ showed that the alpha-induced signal was separable from the gamma signal.
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