On a New Photogalvanic Effect Due to Free‐Carrier Absorption
F. HennebergerSektion Physik der Humboldt-Universität zu Berlin, Bereich HalbleiteroptikN. S. AverkievA. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, LeningradRustam Yavkachovich RasulovA. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad
1982en
ABI
Аннотация
Abstract A new photocurrent induced by optical orientation of free carriers under intraband absorption is theoretically investigated. Using a one‐band model it is shown that this current originates from interferences between harmonic and anharmonic processes of the electron–phonon interaction. A general expression for the current is derived for both, linear and circular polarized light. As an example the temperature dependence of the current is calculated for tellurium.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 2Использованных источников: 0