Formation of Buried Layers of (SiC)<sub>1-x</sub>(AINT)<sub>x</sub> in 6H-SiC Using Ion-Beam Synthesis
R.A. YankovInstitute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314, Dresden, GermanyN. HatzopoulosInstitute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314, Dresden, GermanyW. FukarekInstitute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314, Dresden, GermanyM. VoelskowInstitute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314, Dresden, GermanyV. HeeraInstitute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314, Dresden, GermanyJ. PezoldtInstitute of Solid State Electronics, Technical University of Ilmenau, POB 100565, 98684, Ilmenau, GermanyW. SkorupaInstitute of Ion beam Physics and Materials Research, Research Centre Rossendrof Inc., POB 510119, 01314, Dresden, Germany
1996en
ABI
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