Работы, цитирующие эту работу

Работ: 3

Работа: Excited states at deep centers in Si:S and Si:Se

1. Mathematical Model for Thermo-Electrical Instabilities in Semiconductors

   Mukaddas Arzikulova

   СтатьяThermal properties of materialsMathematical Modelling and Applications2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.004193

2. Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters

   Yu. A. Astrov, L. М. Portsel, А. N. Lodygin +2

   СтатьяSpectroscopy and Laser ApplicationsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000174

3. Investigation of Thermo-Electrical Instabilities in a Semiconductor as 2D Dynamical Systems

   Mukaddas Arzikulova

   СтатьяThermal properties of materialsMathematical Modelling and Applications2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.006486