Growth and optical properties of single-crystal metastable (GaAs) <sub> 1− <i>x</i> </sub> Ge <sub> <i>x</i> </sub> alloys
Scott A. BarnettUniversity of Illinois at Urbana-Champaign, Urbana, IL 61801, USAMark RayUniversity of Illinois at Urbana-Champaign, Urbana, IL 61801, USAA. LastrasUniversity of Illinois at Urbana-Champaign, Urbana, IL 61801, USAB. KramerUniversity of Illinois at Urbana-Champaign, Urbana, IL 61801, USAJ. E. GreeneUniversity of Illinois at Urbana-Champaign, Urbana, IL 61801, USAP. M. RaccahDepartment of Physics, University of Illinois at Chicago, Chicago, IL 60680, USAL. L. AbelsDepartment of Physics, University of Illinois at Chicago, Chicago, IL 60680, USA
1982en
ABI
Аннотация
Single-crystal metastable (GaAs)1−xGex alloys with 0≤x≤1 have been grown on (100) GaAs substrates using ultra-high-vacuum ion-beam sputter deposition. Optical absorption measurements showed that the direct gap E0 exhibited a large negative, but nonparabolic, bowing as a function of x with a broad minimum E0≃0.5 eV near 35 mole % Ge. Raman results exhibited a nonlinear ‘single-mode’ behaviour, with the longitudinal and transverse optical modes becoming degenerate at x = 1.
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