Leakage Current Distribution of Cu-Contaminated Thin SiO₂

Dielectric degradation of an intentionally Cu-contaminated SiO2 film on an Si substrate was investigated using conducting atomic force microscopy. It was shown that local oxide leakage current did not increase at points occupied by Cu particles, while it increased at points other than that occupied by Cu particles. Combination of sulfuric acid/hydrogen peroxide mixture immersion and total reflection X-ray fluorescence analyses indicated that high-density Cu atoms near the SiO2 surface induced the high leakage current.

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