Atomic-Scale Sources and Mechanism of Nanoscale Electronic Disorder in Bi <sub>2</sub> Sr <sub>2</sub> CaCu <sub>2</sub> O <sub>8+δ</sub>
K. McElroyDepartment of Physics, University of California, Berkeley, CA 94720, USAJinho LeeDepartment of Physics, University of California, Berkeley, CA 94720, USAJames SlezakDepartment of Physics, University of California, Berkeley, CA 94720, USAD.-H. LeeDepartment of Physics, University of California, Berkeley, CA 94720, USAHiroshi EisakiDepartment of Physics, University of California, Berkeley, CA 94720, USAS. UchidaDepartment of Physics, University of California, Berkeley, CA 94720, USAJ. C. DavisDepartment of Physics, University of California, Berkeley, CA 94720, USA
2005en
ABI
Аннотация
The randomness of dopant atom distributions in cuprate high-critical temperature superconductors has long been suspected to cause nanoscale electronic disorder. In the superconductor Bi2Sr2CaCu2O8+delta, we identified populations of atomic-scale impurity states whose spatial densities follow closely those of the oxygen dopant atoms. We found that the impurity-state locations are strongly correlated with all manifestations of the nanoscale electronic disorder. This disorder occurs via an unanticipated mechanism exhibiting high-energy spectral weight shifts, with associated strong superconducting coherence peak suppression but very weak scattering of low-energy quasi-particles.
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