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Maximum Metallic Resistance in Thin Wires

D. J. ThoulessDepartment of Mathematical Physics, University of Birmingham, Birmingham B15 2TT, England
1977en
ABI

Аннотация

It is argued that electronic states should be localized in any wire whose impurity resistance is greater than about 10 k\ensuremath{\Omega}. At sufficiently low temperatures this will lead to a ${T}^{\ensuremath{-}2}$ increase in resistance because one-dimensional phonons or excited electrons are needed to cause transitions between localized states. An estimate is made of the temperature needed to observe this effect.

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Цитирований: 2Использованных источников: 0