Electronic structure and positron states at vacancies in Si and GaAs
M. J. PuskaMax-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of GermanyO. JepsenMax-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of GermanyO. GunnarssonMax-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of GermanyR. M. NieminenMax-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Federal Republic of Germany
1986en
ABI
Аннотация
The self-consistent electron structures of the perfect Si and GaAs lattices are calculated by the linear-muffin-tin-orbital (LMTO) band-structure method within the atomic-sphere approximation (ASA). Monovacancies in different charge states are treated by the self-consistent LMTO-ASA Green's-function method. The corresponding positron states are determined by the same methods and positron annihilation characteristics are calculated. The results are compared with recent experiments.
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