High-Energy Ion Beam Analysis of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>x</sub> Thin Films
Michio WatamoriElectron Beam Laboratory, Faculty of Engineering, Osaka UniversityKenjiro OuraElectron Beam Laboratory, Faculty of Engineering, Osaka UniversityFumiya ShojiElectron Beam Laboratory, Faculty of Engineering, Osaka UniversityTsutomu YotsuyaOsaka Prefectural Industrial Research InstituteSoichi OGAWAOsaka Prefectural Industrial Research InstituteTeruo HanawaElectron Beam Laboratory, Faculty of Engineering, Osaka University
1989en
ABI
Аннотация
The composition and crystalline structure of high- T c superconducting YBa 2 Cu 3 O x thin films formed on MgO(100) and Si(100) substrates have been investigated by Rutherford backscattering and channeling techniques. Y, Ba, Cu contents have been analyzed by employing a high-energy (over 4.5 MeV) 4 He ions and large scattering angle (near 170°) condition, where Y, Ba and Cu peaks are clearly separated from each other. Oxygen concentration has been obtained through the use of low primary energy (below 2.5 MeV) and small scattering angle (below 150°) conditions, where the O peak is separated from the background. The crystalline quality of the films has also been investigated by ion channeling techniques.
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