ZnO-infiltrated opal: influence of the stop-zone on the UV spontaneous emission
G. A. EmeľchenkoInstitute of Solid State Physics, Russian Academy of Science, 142432, Chernogolovka, Moscow District, RussiaА. Н. ГрузинцевInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of#N#Science, 142432 Chernogolovka, Moscow District,#N#RussiaВ. М. МасаловInstitute of Solid State Physics, Russian Academy of Science, 142432, Chernogolovka, Moscow District, RussiaÉ. N. SamarovInstitute of Solid State Physics, Russian Academy of Science, 142432, Chernogolovka, Moscow District, RussiaA. V. Bazhenov̇Institute of Solid State Physics, Russian Academy of Science, 142432, Chernogolovka, Moscow District, RussiaE. E. YakimovInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of#N#Science, 142432 Chernogolovka, Moscow District,#N#Russia
2005en
ABI
Аннотация
A ZnO infiltration technology was developed by chemical deposition from solution into a three-dimensional opal lattice; samples of the ZnO–opal composites were prepared with the predominating UV emission at room temperature. It is shown that the use of 'raw' opals and an incomplete filling of pores by semiconducting material increase the edge excitonic emission several-fold at room temperature. Angular dependences of the photoluminescence and reflectance spectra of the ZnO-infiltrated opal are studied. The suppression effect of the spontaneous emission in the stop band is observed. These results can be used to create effective laser light sources in the UV spectral range using the 'photonic crystal' effect.
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