Sol-Gel Derived Ferroelectric Pb(Zr_1-xTi_x)O₃–SiO₂–B₂O₃ Glass-Ceramic Thin Films Formed at Relatively Low Annealing Temperatures

Ferroelectric PZT(PbZr 0.52 Ti 0.48 O 3 )–5 mol%SiO 2 –1 mol%B 2 O 3 glass-ceramic thin films were fabricated by sol-gel and rapid thermal annealing (RTA) techniques on Pt/Ti/SiO 2 /Si(100) substrates at a relatively low annealing temperature of 650°C. The perovskite-phase PZT crystallites grew in the films and were preferentially oriented in the (111) direction. The PZT crystallization temperature was lower in the PZT–SiO 2 –B 2 O 3 system, compared to that in PZT–SiO 2 and pure PZT. The dielectric constant and loss, remnant polarization, and leakage current of the films annealed at temperatures ranging from 650 to 700°C were lower than those of pure PZT.

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