Defects in irradiated silicon: EPR of the tin-vacancy pair

An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with $S=1$. Studies versus wavelength of illumination indicate that it has a donor level at $\ensuremath{\sim}{E}_{v}+0.35$ eV. Analysis of the EPR spectrum leads to a model in which the tin atom resides in a position halfway between two normal silicon atom sites (${D}_{3d}$). It is stable to \ensuremath{\sim}500 K.

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