Hall effect and hole densities in Ga1−xMnxAs
K. W. EdmondsSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United KingdomK. Y. WangSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United KingdomR. P. CampionSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United KingdomAlexander NeumannSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United KingdomC. T. FoxonSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United KingdomB. L. GallagherSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United KingdomP. C. MainSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
2002en
ABI
Аннотация
By studying the Hall effect in a series of low resistivity Ga1−xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature TC are obtained over the range 0.015⩽x⩽0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0×1027 m−3 when TC=125 K. These data allow the first meaningful comparison of mean field predicted Curie temperatures with experiment over a wide range of x. The theory is in qualitative agreement with experiment, but overestimates TC at large x and underestimates TC at low x.
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