Magnetotransport properties of<i>p</i>-type (In,Mn)As diluted magnetic III-V semiconductors
Hideo OhnoDepartment of Electrical Engineering, Hokkaido University, Sapporo 060, JapanH. MunekataIBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598T. PenneyIBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598S. von MolnárIBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598L. L. ChangIBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
1992en
ABI
Аннотация
Magnetotransport properties of p-type (In,Mn)As, a new diluted magnetic semiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3d spins is manifested in the anomalous Hall effect, which dominates the Hall resistivity from low temperature (0.4 K) to nearly room temperature, and in the formation of partial ferromagnetic order below 7.5 K, which is a cooperative phenomenon related to carrier localization. The coexistence of remanent magnetization and unsaturated spins as well as the large negative magnetoresistance at low temperatures is explained by the formation of large bound magnetic polarons.
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