Possibility of forming continuous solid solutions of silicon and germanium with compounds with defective diamond-like structures

The possibility is considered of forming continuous solid subtraction solutions by substituting clusters of silicon or germanium atoms by molecules of III2VI3 and II III2VI4 compounds that are defective tetrahedral phases. The alloying of Si and Ge with admixtures of these compounds is of interest for creating nanodefects and researching impurity voltaic effects.

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