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Single crystal silicon carbide detector of emitted ions and soft x rays from power laser-generated plasmas

L. TorrisiINFN-Laboratori Nazionali del Sud 1 , V. S. Sofia 62, 95123 Catania, ItalyG. FótiUniversità di Catania 3 Dipartimento di Fisica, , V. S. Sofia 64, 95123 Catania, ItalyL. GiuffridaINFN-Laboratori Nazionali del Sud 1 , V. S. Sofia 62, 95123 Catania, ItalyDonatella PuglisiUniversità di Catania 3 Dipartimento di Fisica, , V. S. Sofia 64, 95123 Catania, ItalyJ. WołowskiInstitute of Plasma Physics and Laser Microfusion 4 , Henry Str., Warsaw, PolandJ. BadziakInstitute of Plasma Physics and Laser Microfusion 4 , Henry Str., Warsaw, PolandP. ParysInstitute of Plasma Physics and Laser Microfusion 4 , Henry Str., Warsaw, PolandM. RosińskiInstitute of Plasma Physics and Laser Microfusion 4 , Henry Str., Warsaw, PolandD. MargaroneASCR 5 Institute of Physics, , Na Slovance 2, 182 21 Prague, Czech RepublicJ. KrásaASCR 5 Institute of Physics, , Na Slovance 2, 182 21 Prague, Czech RepublicA. VelyhanASCR 5 Institute of Physics, , Na Slovance 2, 182 21 Prague, Czech RepublicU. UllschmiedASCR 5 Institute of Physics, , Na Slovance 2, 182 21 Prague, Czech Republic
2009en
ABI

Аннотация

A single-crystal silicon carbide (SiC) detector was used for measurements of soft x rays, electrons, and ion emission from laser-generated plasma obtained with the use of the Prague Asterix Laser System (PALS) at intensities of the order of 1016 W/cm2 and pulse duration of 300 ps. Measurements were performed by varying the laser intensity and the nature of the irradiated target. The spectra obtained by using the SiC detector show not only the photopeak due to UV and soft x-ray detection, but also various peaks due to the detection of energetic charged particles. Time-of-flight technique was employed to determine the ion kinetic energy of particles emitted from the plasma and to perform a comparison between SiC and traditional ion collectors. The detector was also employed by inserting absorber films of different thickness in front of the SiC surface in order to determine, as a first approximation, the mean energy of the soft x-ray emission from the plasma.

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