Calculated and experimental studies at critical facility in view of development of a technology for neutron transmutation doping of a large size silicon specimen in WWR-K reactor

The Institute of Nuclear Physics using WWR-K research reactor were carried out studies to develop the technology of neutron-transmutation doping of silicon ingot with a diameter of 150 mm and a height of 200 mm. As a result, was obtained silicon ingot with an uneven electrical resistivity at the level of ∼6%. In 2017, together with the Chiyoda Technol Corporation, (Japan) were started the activities to develop a technology of neutron-transmutation doping of large sized silicon with a diameter of more than 150 mm and a height of up to 500 mm for the WWR-K reactor. The main goal is to achieve an irregularity electrical resistivity in terms of the volume of the silicon ingot at the level of 3-4 %. At the first stage, were performed the works on the formation of the thermal neutron field in irradiation device. The object of investigation is a silicon ingot with a diameter of 150 mm and a height of 500 mm. For reduction of the height irregularity are used neutron absorbers arranged along the height of the ingot. The development of irradiation device with a neutron absorber and the corresponding neutron measurements were performed at the critical facility. The silicon ingot is modeled by a block of the aluminium. At the second stage it is planned to perform the works on the WWR-K reactor to test the developed technology with the further irradiation of a silicon ingot.

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