Electrical characterization of the organic semiconductor Ag/CuPc/Au Schottky diode

This paper reports on the fabrication and investigation of a surface-type organic semiconductor copper phthalocyanine (CuPc) based diode. A thin film of CuPc of thickness 100 nm was thermally sublimed onto a glass substrate with preliminary deposited metallic electrodes to form a surface-type Ag/CuPc/Au Schottky diode. The current-voltage characteristics were measured at room temperature under dark conditions. The barrier height was calculated as 1.05 eV The values of mobility and conductivity was found to be 1.74 × 10−9 cm2 (V · s) and 5.5 × 10−6 Ω−1 · cm−1, respectively. At low voltages the device showed ohmic conduction and the space charge limited current conduction mechanisms were dominated at higher voltages.

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