Optical limiting in GaAs
Thomas F. BoggessCenter of Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, TX, USAArthur L. SmirlCenter of Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, TX, USASteven C. MossCenter of Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, TX, USAIan W. BoydCenter of Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, TX, USAEric Van StrylandCenter of Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, TX, USA
1985en
ABI
Аннотация
We have used two-photon absorption, self-defocusing, and optically-induced melting in GaAs to limit 1 μm picosecond pulsed radiation. The contribution to the limiting action from each of these mechanisms is discussed and demonstrated. Additionally, we measure a two-photon absorption coefficient of 26 cm/GW, which is in good agreement with the smallest values reported in the literature. A pulse-width study of the nonlinear absorption was conducted to isolate the effects of two-photon-generated free-carrier absorption. Results indicate that, even though the number of free-carriers is sufficient to severely defocus the incident beam, free-carrier absorption does not measurably contribute to the nonlinear absorption.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 2Использованных источников: 0