RF Sputtered gold-amorphous silicon Schottky-barrier diodes
Аннотация
Gold Schottky-barrier diodes formed on reactively sputtered amorphous silicon thin films have been investigated. Device forward <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I-V</tex> characteristics are well modeled as a Schottky diode in series with a temperature activated series resistor. At 300K, the forward current indicates a diode correction factor of 1.4 and a saturation current of 5.8 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-10</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The metal-semiconductor barrier height is 0.93 eV. Capacitance versus frequency measurements indicate a depletion region thickness of 3000 Å. In the depletion region, the mobility-lifetime products are estimated to be of the order of 5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-11</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V which is substantially less than the value of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V in the quasi-neutral region, It is suggested that deep gap states are responsible for this difference. Carrier recombination in the depletion region limits the photovoltaic performance.
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