Thermal resistance of silicon point contacts
L. WeberMax-Planck-Institut für Festkörperforschung, Postfach 80 06 65, D-7000 Stuttgart 80, Federal Republic of GermanyE. GmelinMax-Planck-Institut für Festkörperforschung, Postfach 80 06 65, D-7000 Stuttgart 80, Federal Republic of GermanyH. J. QueisserMax-Planck-Institut für Festkörperforschung, Postfach 80 06 65, D-7000 Stuttgart 80, Federal Republic of Germany
1989en
ABI
Аннотация
We investigate thermal transport on microcontacts established between two silicon wedges. The measurements are carried out with a variable contact radius of 0.3--2 \ensuremath{\mu}m at temperatures from 2 to 300 K. The measured thermal resistance is used to calculate the contact radius with an accuracy better than 50%. Comparison of electrical and thermal transport indicates the existence of a tunnel barrier between the contact legs. Electrical measurements are therefore unreliable to determine the contact size.
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