Luminescence quenching in erbium-doped hydrogenated amorphous silicon
Jung H. ShinFOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, the NetherlandsR. SernaFOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, the NetherlandsG.N. van den HovenFOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, the NetherlandsAlbert PolmanFOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, the NetherlandsWilfried van SarkDepartment of Atomic and Interface Physics, Debye Institute, University of Utrecht, P. O. Box 80000, 3508 TA Utrecht, the NetherlandsA. M. VredenbergDepartment of Atomic and Interface Physics, Debye Institute, University of Utrecht, P. O. Box 80000, 3508 TA Utrecht, the Netherlands
1996en
ABI
Аннотация
Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room-temperature photoluminescence at 1.54 μm, due to an intra-4f transition in Er4+, is observed after thermal annealing at 300–400 °C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased.
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