A comparison of majority- and minority-carrier silicon MIS solar cells

A systematic experimental investigation is reported of metal-SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -silicon (MIS) solar cells, as a function of SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> thickness <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</tex> , in the useful range 8 Å < <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</tex> < 20 Å. Both majority-carder (Au-SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> - nSi) and minority-carrier (Al-SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -pSi) structures are studied and their performance compared for SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layers prepared under identical oxidation conditions and with identical silicon surface treatments. The short-circuit current densities are observed to be suppressed by tunneling through the SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layers for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d \gsim 17</tex> Å, whereas fill factors begin to decrease at even smaller values of d. The optimum effective AM1 conversion efficiencies for the majority-carrier cells are 9-10 percent for 10 Å ≲ <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</tex> ≲ 14 Å, and for the minority-carrier cells are 11-12 percent for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d \simeq 10-11</tex> Å. These results are in agreement with theoretical calculations, also presented here, which take account of both electrostatic and dynamic effects of interface states, and of their dependence on bias voltage and illumination.

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