Experimental Studies of Magnetoresistance Tensor Components in Bismuth at Low Temperatures

Abstract The monotonic and oscillating parts of the magnetoresistance tensor components are studied on a pure single crystals of bismuth. The nondiagonal‐to‐diagonal components ratio is shown to be sufficiently small at helium temperatures, so that σ xx = 1/ϱ xx with a high degree of accuracy, and thus the experimental deviations from the law ϱ xx = α H n ( n = 2 for ω c τ ≫ 1) are independent of the electron–hole compensation disturbance in Bi. Within the framework of the ellipsoidal parabolic model taking account of the relaxation time anisotropy, the mobility tensor components at helium temperatures are found whose values coincide with data obtained by other authors in weak (ω c τ > 1) magnetic fields. It has been revealed that for magnetic field directions H near twinning planes the sign of an even constituent of the nondiagonal magnetoresistance tensor components becomes opposite to that for samples with no twinning interlayer. The twinning plane effect is essential up to 70 °K. It is also found that at helium temperatures the even constituent ϱ yx ( H ) changes its sign in high magnetic fields (10 kOe) near H ‖ C 3 . It is shown that the transition in the H ‖ C 3 direction under H rotation in the bisectrix plane causes the oscillation phase of the even constituent ϱ yx to change. It is found that in the preultraquantum region of the magnetic fields the oscillating part of ϱ yx turns out to be greater at certain H directions than the monotonic one.

Перевод пока недоступен