Large periodic potential under lateral surface superlattices fabricated from heteroepitaxial stressor layers
C. J. EmeleusDepartment of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United KingdomB. MiltonDepartment of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United KingdomA. R. LongDepartment of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United KingdomJ. H. DaviesDepartment of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United KingdomD. E. PetticrewDepartment of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United KingdomM. HollandDepartment of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom
1998en
ABI
Аннотация
We have fabricated lateral surface superlattices by etching a strained layer of In0.2Ga0.8As near the surface of a heterostructure. This provides strong modulation of the electron gas while retaining a high electron mobility. The potential arises mainly from strain and the piezoelectric effect, which depends on orientation, and from the change in the surface profile. The fundamental components of these two contributions cancel in one orientation to leave a dominant second harmonic. This effectively halves the period of the superlattice from its lithographic value and provides a promising technique for creating potentials with a period comparable to the Fermi wavelength.
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