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Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach

Margit ZachariasInstitute of Microstructure Physics, Weinberg 2, 06120 Halle, GermanyJ. HeitmannInstitute of Microstructure Physics, Weinberg 2, 06120 Halle, GermanyR. ScholzInstitute of Microstructure Physics, Weinberg 2, 06120 Halle, GermanyU. KahlerInstitute of Microstructure Physics, Weinberg 2, 06120 Halle, GermanyMichael SchmidtInstitute of Experimental Physics, Otto-von-Guericke University, PF 4120, 39016 Magdeburg, GermanyJ. BläsingInstitute of Experimental Physics, Otto-von-Guericke University, PF 4120, 39016 Magdeburg, Germany
2002en
ABI

Аннотация

Phase separation and thermal crystallization of SiO/SiO2 superlattices results in ordered arranged silicon nanocrystals. The preparation method which is fully compatible with Si technologies enables independent control of particle size as well as of particle density and spatial position by using a constant stoichiometry of the layers. Transmission electron microscopy investigations confirm the size control in samples with an upper limit of the nanocrystal sizes of 3.8, 2.5, and 2.0 nm without decreasing the silicon nanocrystal density for smaller sizes. The nanocrystals show a strong luminescence intensity in the visible and near-infrared region. A size-dependent blueshift of the luminescence and a luminescence intensity comparable to porous Si are observed. Nearly size independent luminescence intensity without bleaching effects gives an indirect proof of the accomplishment of the independent control of crystal size and number.

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