Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method
Chi‐Sun HwangElectronics and Telecommunications Research Institute, Oxide TFT Research Team, Daejeon, KoreaSang‐Hee Ko ParkElectronics and Telecommunications Research Institute, Oxide TFT Research Team, Daejeon, KoreaHimchan OhElectronics and Telecommunications Research Institute, Oxide TFT Research Team, Daejeon, KoreaMin‐Ki RyuElectronics and Telecommunications Research Institute, Oxide TFT Research Team, Daejeon, KoreaKyoung-Ik ChoElectronics and Telecommunications Research Institute, Oxide TFT Research Team, Daejeon, KoreaSung‐Min YoonDepartment of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Gyeonggido, Korea
2014en
ABI
Аннотация
Vertical channel ZnO thin-film transistors (TFTs) were fabricated on glass and flexible substrates. Conformally deposited thin films prepared using atomic layer deposition were used for the active layer, gate insulator, and gate electrode. Owing to the very short channel (0.5 μm) and very thin (20 nm) gate insulator layer, the ON-current of the vertical channel ZnO TFT was 57 μA at the gate and drain voltages of 3 and 4 V, respectively. Vertical channel oxide TFTs may be promising for device applications with low power consumption.
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